1. About This MegaCore Function
Release Information
Table 1–1 lists information about this release of the Altera ? FFT MegaCore ? function.
Table 1–1. FFT MegaCore Function Release Information
Version
Release Date
Ordering Code
Product ID
Vendor ID
Item
Description
13.1
November 2013
IP-FFT
0034
6AF7
f For more information about this release, refer to the MegaCore IP Library Release Notes
Altera verifies that the current version of the Quartus ? II software compiles the
previous version of each MegaCore ? function. The MegaCore IP Library Release Notes
and Errata report any exceptions to this verification. Altera does not verify
compilation with MegaCore function versions older than one release.
Device Family Support
Altera offers the following device support levels for Altera IP cores:
Preliminary support —Altera verifies the IP core with preliminary timing models
for this device family. The IP core meets all functional requirements, but might still
be undergoing timing analysis for the device family. You can use it in production
designs with caution.
Final support —Altera verifies the IP core with final timing models for this device
family. The IP core meets all functional and timing requirements for the device
family and can be used in production designs.
Table 1–3 lists the level of support offered by the FFT MegaCore function to each of
the Altera device families.
Table 1–2. Device Family Support (Part 1 of 2)
Device Family
Support
Arria ?
II GX
Final
Arria II GZ
Arria V
Arria V GZ
Cyclone ? III
Cyclone III LS
Final
Final
Final
Final
Final
November 2013
Altera Corporation
FFT MegaCore Function
User Guide
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相关代理商/技术参数
IPFH6N03LA G 功能描述:MOSFET N-CH 25V 50A DPAK RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:OptiMOS™ 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds(最大)@ Id, Vgs @ 25° C:180 毫欧 @ 9A,10V Id 时的 Vgs(th)(最大):4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
IPFH6N03LAG 功能描述:MOSFET N-Channel MOSFET 20-200V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
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IPG1-0-90 制造商:Sensata Technologies 功能描述:1 Pole
IPG1-1-41-203-90 制造商:Sensata Technologies 功能描述:1 Pole
IPG1-1-51-103-A-00-V 制造商:Sensata Technologies 功能描述:Circuit Breaker Magnetic 1Pole 10A 65VDC